Performance evaluation of Carbon nanotube junctionless tunneling field effect transistor (CNT-JLTFET) under torsional strain: A quantum simulation study

Document Type : Reasearch Paper

Authors

• Soheila Moghadam
• Seyed Saleh Ghoreishi
• Reza Yousefi
• Habib Adarang

Department of Electrical Engineering, Nour Branch, Islamic Azad University, Nour, Iran.

Abstract

In this paper, the performance of a CNT-JLTFET under different values of torsional strains of 0, 3, and 5 degrees has been investigated. Simulation has been carried out using non-equilibrium Green’s function (NEGF) formalism in the mode-space approach and in the ballistic limit. The simulation results indicate that, under torsional strain, an increase occurs in the energy band-gap, and thus the on- and off-currents are reduced, thought that reduction has a greater percentage in the off-current, resulting in the increase in the ON/OFF current ratio. Besides, the switching characteristics of the device including power-delay product (PDP) and intrinsic delay (τ) have been studied.

Keywords

• Band-Structure-Limited Velocity
• Intrinsic Delay (τ)
• Mode-Space
• Power-Delay-Product (PDP)
• Torsional Strain

20.1001.1.20088868.2020.11.3.6.8

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