Design, simulation and analysis of high-K gate dielectric FinField effect transistor

Document Type : Short Communication

Authors

• Marupaka Aditya ¹
• Karumuri Srinivasa Rao ¹
• Kondavitee Girija Sravani ^{1, 2}
• Koushik Guha ²

¹ MEMS Research Center, Department of Electronics and Communication Engineering, KoneruLakshmaiah Education Foundation (Deemed to be University), Green Fields, Vaddeswaram, Andhra Pradesh, India.

² National MEMS Design Center, Department of Electronics and Communication Engineering, National Institute of Technology, Silchar, Assam, India.

10.22034/ijnd.2021.681554

Abstract

The devices with additional gates like Fin Field effect transistor (FinFET) provide higher control on subthreshold parameters and are favorable for Ultra large-scale integration. Also, these structures provide high control on current through the channel and with minimum leakage. In this paper we designed a FinFET with high-K gate dielectric material i.e Hafnium oxide as gate oxide. A comparison of similar sized transistor with Air and Silicon dioxide as gate material is performed. The comparison is mainly in terms of performance parameters like transconductance, subthreshold slope, and drain current characteristics. There is an increase in ON current on using a high-K dielectric material and subsequently an improvement in other parameters like subthreshold slope, transconductance and intrinsic gain.

Keywords

• FinFET
• Hafnium Oxide
• High-K Dielectric
• Subthreshold Slope
• Transconductance

20.1001.1.20088868.2021.12.3.10.9

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